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PD - 95419
HEXFET(R) Power MOSFET
l l l l l l
IRFI530NPBF
D
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free
VDSS = 100V
G S
RDS(on) = 0.11 ID = 12A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
TO-220 FULLP AK
Absolute Maximum Ratings
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG
Parameter
Max.
12 8.6 60 41 0.27 20 150 9.0 4.1 5.0 -55 to + 175 300 (1.6mm from case) 10 lbfin (1.1Nm)
Units
A W W/C V mJ A mJ V/ns C
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Current Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient
Min.

Typ.

Max.
3.7 65
Units
C/W 06/16/04
IRFI530NPBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) g fs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss C
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance
Min. 100 2.0 6.4
Typ. Max. Units Conditions V VGS = 0V, ID = 250A 0.12 V/C Reference to 25C, ID = 1mA 0.11 VGS = 10V, ID = 6.6A 4.0 V VDS = VGS, ID = 250A S VDS = 50V, ID = 9.0A 25 VDS = 100V, V GS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 44 ID = 9.0A 6.2 nC VDS = 80V 21 VGS = 10V, See Fig. 6 and 13 6.4 VDD = 50V 27 ID = 9.0A ns 37 RG = 12 25 RD = 5.5, See Fig. 10 Between lead, 4.5 6mm (0.25in.) nH from package 7.5 and center of die contact 640 VGS = 0V 160 VDS = 25V pF 88 = 1.0MHz, See Fig. 5 12 = 1.0MHz
D
G
S
Source-Drain Ratings and Characteristics
IS
I SM
VSD t rr Q rr Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units 130 650 12 60 1.3 190 970 V ns nC A
Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 6.6A, V GS = 0V TJ = 25C, IF = 9.0A di/dt = 100A/s
D
G S
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300s; duty cycle 2%. t=60s, =60Hz
Uses IRF530N data and test conditions
VDD = 15V, starting TJ = 25C, L = 3.1mH
RG = 25, IAS = 9.0A. (See Figure 12)
ISD 9.0A, di/dt 520A/s, VDD V(BR)DSS,
TJ 175C
IRFI530NPBF
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
I , Drain-to-Source Current (A) D
I , Drain-to-Source Current (A) D
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
10
10
4.5V
4.5V
1 0.1
20s PULSE WIDTH TJ = 25C
1 10
A
1 0.1 1
20s PULSE WIDTH TJ = 175C
10 100
A
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D = 15A
I D , Drain-to-Source Current (A)
2.5
TJ = 25C TJ = 175C
2.0
10
1.5
1.0
0.5
1 4 5 6 7
V DS = 50V 20s PULSE WIDTH
8 9 10
A
0.0 -60 -40 -20 0 20 40 60
VGS = 10V
80 100 120 140 160 180
A
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRFI530NPBF
1200
1000
C, Capacitance (pF)
Ciss
800
600
Coss
400
V GS , Gate-to-Source Voltage (V)
V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = Cds + C gd
20
I D = 9.0A V DS = 80V V DS = 50V V DS = 20V
16
12
8
Crss
200
4
0 1 10 100
A
0 0 5 10 15 20
FOR TEST CIRCUIT SEE FIGURE 13
25 30 35 40 45
A
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
I D , Drain Current (A)
100
TJ = 175C
10
10s
TJ = 25C
10
100s
1 0.4 0.6 0.8 1.0 1.2
VGS = 0V
1.4
A
1 1
TC = 25C TJ = 175C Single Pulse
10
1ms 10ms 100
A
1000
1.6
VSD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRFI530NPBF
8.0
VDS V GS RG
RD
D.U.T.
+
ID , Drain Current (A)
6.0
-V DD
10V
4.0
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
2.0
VDS 90%
0.0 25 50 75 100 125 150 175
TC , Case Temperature ( C)
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
10
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
D = 0.50 1 0.20 0.10 0.05 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10
0.1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRFI530NPBF
L
E AS , Single Pulse Avalanche Energy (mJ)
VDS D.U.T. RG + 10 V
350
TOP
300
BOTTOM
ID 3.7A 6.4A 9.0A
VDD
250
IAS tp
0.01
200
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp VDD VDS
150
100
50
0
VDD = 25V
25 50 75 100 125 150
A
175
Starting TJ , Junction Temperature (C)
IAS
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRFI530NPBF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
IRFI530NPBF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
E XAMP L E : T H IS IS AN IR F I840G W IT H AS S E MB L Y L OT COD E 3432 AS S E MB L E D ON WW 24 1999 IN T H E AS S E MB L Y L IN E "K " P AR T N U M B E R IN T E R N AT IONAL R E CT IF IE R L OGO AS S E M B L Y L OT COD E
IR F I840G 924K 34 32
Note: "P" in assembly line position indicates "Lead-Free"
DAT E COD E YE AR 9 = 1999 WE E K 24 L IN E K
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/04
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/

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